Buy this book on-line Foord, J. S.; Tsang, W. T : Chemical Beam Epitaxy and Related TechniquesJohn Wiley & Sons, New York, 1997 ISBN 0471967483
8vo - over 7¾ - 9¾" tall. 0471967483 | Chapters cover: chemical beam epitaxy; growth apparatus design and safety considerations; precursors for chemical beam epitaxy; reaction mechanisms for III-V semiconductor growth by chemical beam epitaxy: physical origins of the growth kinetics and film purities observed; growth of BaAs-based devices by chemical beam epitaxy; CBE inP-based materials and devices; MOMBE of antimonides and growth model; chemical beam epitaxy of widegap II-VI compound semiconductors; gas source molecular beam epitaxy of silicon and related materials; gas source molecular beam epitaxy; dopants and dopant incorporation; selected area epitaxy; chemical beam etching; laser-assisted epitasy; index. Maroon illustrated glossy boards. Some library markings; no card pocket. Clean and tightly bound.. Book. Book Condition: Very Good Ex-Library Condition. Binding: Hardcover Click here for full details of this book, to ask a question or to buy it on-line. Bibliophile Bookbase probably offers multiple copies of Foord, J. S.; Tsang, W. T : Chemical Beam Epitaxy and Related Techniques. Click here to select from a complete list of available copies of this book. Bibliophile Bookbase lists over 5 million books, maps and prints including atlases, antiquarian books, rare books, libri rari and livres d'occasion. Bibliophile Bookbase for antiquarian books, maps and prints. |